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SiBar Thyristor
SiBar Thyristor Surge Protectors
Raychem Circuit Protection's SiBar thyristor surge protection devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lightning, power contact, and power induction. These devices have a high electrical surge capability to help protect against transient faults and a high off-state impedance, rendering them virtually transparent during normal system operation. SiBar thyristor surge protectors are designed to assist telecommunication and computer telephony equipment in meeting the applicable requirements and industry specifications.
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Benefits:
* Helps provide protection for sensitive telecom electronic equipment * Low leakage current * Low power dissipation * Fast, reliable operation * No wear-out mechanisms * Helps designers meet worldwide telecom standards * Helps reduce warranty and service costs * Easy installation * Helps improve power efficiency of equipment
Features:
* Bidirectional transient voltage protection * High off-state impedance * Low on-state voltage * High surge capability * Short-circuit failure mode * Surface-mount technology * Lead-free leads available on all parts
Applications:
* * * * * * * Modems Fax machines PBX systems Phones POS systems Analog and digital linecards Other customer premise and network equipment requiring protection
Devices in this section are grouped by: Surge Capability, Maximum Off-State Voltage, Package Size
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Selection Guide for SiBar Thyristor Surge Protectors
Step 1. Determine the circuit's operating parameters. Fill in the following information about the circuit: Maximum ambient operating temperature ______________________ Maximum DC supply voltage (VDC Max..) ________________________ Maximum ringing (AC) voltage (VAC Max.) ______________________ System voltage damage threshold Maximum fault current and duration Maximum system operating current Applicable industry requirements __________________________ __________________________ __________________________ __________________________
Step 2. Calculate the maximum operating voltage of your system. Maximum operating voltage = VDC Max. + (1.414 x VAC Max.) Refer to Table V1 to select a SiBar thyristor device with a maximum offstate voltage (VDM) rating that is close to, but greater than, the maximum operating voltage of your system. Step 3. Verify that the system voltage damage threshold is greater than the rated maximum breakover voltage (VBO). Refer to Table V1 to confirm that the maximum breakover voltage of the device you selected in Step 2 is less than the system voltage damage threshold.
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Selection Guide for SiBar Thyristor Surge Protectors continued
Step 4. Verify that the maximum fault current of the system and its duration or the fault current defined in the industry specification(s) are less than the surge current rating of the device selected. For help in determining which industry specifications may apply, refer to the Protection Application Guide on the next page. Refer to Table V2 for SiBar thyristor surge current ratings applicable to TIA 968-A (FCC Part 68), Telcordia GR-1089, ITU K.20, K.21, K.45 industry specifications. Step 5. Verify that the maximum system operating current is less than the minimum hold current rating (IH) in Table V1 for the device selected. Using Figure V4, verify that IH is greater than the maximum system operating current over the entire ambient operating temperature range. (As with IH, VDM and VBO also vary with ambient temperature, to a lesser degree. Figures V2 and V3 can be used to determine that the device selected continues to meet your requirements over the ambient operating temperature range.) Step 6. Verify that the dimensions in Table V4 for the SiBar thyristor device are compatible witht the application's space requirements.
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Protection Application Guide for SiBar Thyristor Surge Protectors
To use this guide, follow the steps below: 1. Select your equipment type from the guide below. 2. Select the type of protection depending on the agency and regional specifications in the second column.
PolySwitch Resettable Devices Application Customer premises equipment, IT equipment Analog modems, V.90 modems, ISDN modems, xDSL modems, ADSL splitters, phone sets, fax machines, answering machines, caller ID, internet appliances, PBX systems, POS terminals, wall plugs Access network equipment (*) Remote terminals, line repeaters, multiplexers, cross-connects, WAN equipment Region/ Specification SiBar Thyristor Surge Protectors1 Key Device Selection Citeria Small Footprint Low Resistance TR600-150 TS600-170 TR600-150-RA TS600-200-RA Fast Time-to-Trip TR600-150-RB TS600-170
North America TVBxxxSA(-L) or TIA-968-A (FCC Part 68), TVAxxxSA(-L) with UL 1950, TR/TS; TVBxxxSC(-L) UL 1459 with TS/TR or fuse Europe/Asia/ TVBxxxSA(-L) South America TVAxxxSA(-L) ITU K.21 North America Telcordia GR-1089 Europe/Asia/ South America ITU K.45 North America Telcordia GR-1089 Europe/Asia/ South America ITU K.20 North America Telcordia GR-974 Europe/Asia/ South America ITU K.20 TVBxxxSC(-L) TVBxxxSA(-L) TVAxxxSA(-L)
TR250-120 TR250-145 TS250-130 TSV250-130 TR600-150-RA TS600-200-RA TR250-120 TR250-145 TS250-130 TSV250-130 TR600-150-RA TS600-200-RA TR250-120 TR250-145 TS250-130 TSV250-130 TR250-180U TGC250-120T TR250-120T TS250-130 TSV250-130 TSL250-080 TR250-120 TS250-130 TSV250-130 TR250-120 TR250-145 TS250-130 TSV250-130 TSL250-080 miniSMDC014 SMD030
TR250-180U TS250-130-RA TSV250-130 TR600-160-RA TS600-200-RA TR250-180U TS250-130-RA TSV250-130 TR600-160-RA TS600-200-RA TR250-180U TS250-130-RA TSV250-130 TR250-180U TC250-145T TR250-145-RA TS250-130-RA TSV250-130 TR250-145 TR250-180U TS250-130-RA TR250-180U TS250-130-RA TSV250-130 TSL250-080 SMD030-2018
TR250-120T-R2 TS250-130-RB
TR600-150-RB TS600-170 TR250-120T-R2 TS250-130-RB
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Central office switching equipment (*) Analog/POTS linecards, ISDN linecards, xDSL modems, ADSL/VDSL splitters, T1/E1 linecards, multiplexers, CSU/DSU, servers
TVBxxxSC(-L) TVBxxxSA(-L) TVAxxxSA(-L)
TR600-150-RB TS600-170 TR250-120T-R2 TS250-130-RB
Primary protection modules (*) MDF modules, Network Interface Devices (NID)
N/A N/A
TR250-180U TGC250-120T TR250-120T-R2 TS250-130-RB TSV250-130 TR250-120T-R2 TSL250-080 TR250-120T-R2 TS250-130-RB
Short-haul/intrabuilding communications equipment (*) LAN equipment, VoIP cards, cable telephony NIU's, wireless local loop handsets
North America Telcordia GR-1089 intrabuilding Europe/Asia/ South America ITU K.21
TVBxxxSA(-L) TVAxxxSA(-L) TVBxxxSA(-L) TVAxxxSA(-L)
LAN intrabuilding power cross protection LAN equipment, VoIP cards, IP phones IEEE 802.3 Power over LAN protection Powered ethernet switches and terminals, IP phones, wireless LAN base stations, microcellular base stations, VoIP cards Cable telephony powering systems Power passing taps
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TVBxxxSA(-L) TVAxxxSA(-L) N/A
TSL250-080 TVAxxxSA SMD030-2018
N/A
BBR550
BBR750
BBR550
Notes: This list is not exhaustive. Raychem Circuit Protection welcomes our customers' input for additional application ideas. For more information on Raychem Circuit Protection PolySwitch resettable devices, refer to telecommunication and networking devices on page 301. * For improved line balance in these applications, resistance-matched parts are recommended. See Telecom and Networking section, page 301 for details. (-L) Lead-free leaded devices are also applicable for these applications.
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Table V1. Product Electrical Characteristics for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices)
Part Number TVA270SA TVA270SA-L
NEW
VDM Max. (V) 270 270 58 170 170 200 200 270 270 300 200 270 300 170 170 200 200 270 270 300
VBO Max. (V) 365 365 78 265 265 320 320 365 365 400 320 365 400 265 265 320 320 365 365 400
I H Min. (mA) 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150
V T Max. (V) 3.0 3.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0
C 1 Typ. (pF) 22 22 43 20 20 20 20 20 20 20 25 25 25 50 50 50 50 50 50 50
NEW NEW NEW NEW
TVB058SA-L TVB170SA TVB170SA-L TVB200SA TVB200SA-L TVB270SA TVB270SA-L TVB300SA-L TVB200SB-L TVB270SB-L TVB300SB-L TVB170SC TVB170SC-L TVB200SC TVB200SC-L TVB270SC TVB270SC-L TVB300SC-L
NEW
Notes: All electrical characteristics are measured at 25C. VDM measured per UL497B pulse requirements: at max. off-state leakage current (IDM) = 5 A. VBO Measured at 100V/s. C1 measured at 1 MHz with a 50 VDC bias.
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di/dt (A/s) 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 dV/dt (V/s) 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000
Table V2. Surge Current Rating for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices)
Part Description TVA270SA TVA270SA-L
NEW
IEC 61000-4-5*ITU K.20/21/45* I TSM TIA-968-A (FCC Part 68)* Telcordia GR-1089* I pp(A) I pp(A) I pp(A) I pp(A) I pp(A) I pp(A) I pp(A) Min. 5 x 320 s 10 x 560 s 10 x 160 s 10 x 1000 s 2 x 10 s 8 x 20 s 5 x 310 s (A) 90 70 100 50 150 150 90 22 90 70 100 50 150 150 90 22 55 90 90 90 90 90 90 90 100 100 100 100 100 100 100 100 100 100 55 70 70 70 70 70 70 70 100 100 100 150 150 150 150 150 150 150 70 100 100 100 100 100 100 100 150 150 150 200 200 200 200 200 200 200 50 50 50 50 50 50 50 50 80 80 80 100 100 100 100 100 100 100 150 150 150 150 150 150 150 150 250 250 250 500 500 500 500 500 500 500 150 150 150 150 150 150 150 150 250 250 250 400 400 400 400 400 400 400 55 90 90 90 90 90 90 90 100 100 100 150 150 150 150 150 150 150 22 22 22 22 22 22 22 22 30 30 30 60 60 60 60 60 60 60
NEW NEW NEW NEW
TVB058SA-L TVB170SA TVB170SA-L TVB200SA TVB200SA-L TVB270SA TVB270SA-L TVB300SA-L TVB200SB-L TVB270SB-L TVB300SB-L TVB170SC TVB170SC-L TVB200SC TVB200SC-L TVB270SC TVB270SC-L TVB300SC-L
NEW
Notes: *Lightning current wave forms for applicable industry specification. I TSM, peak on-state surge current is measured at 60 Hz, one cycle. di/dt: critical rate-of-rise of on-state current (pulsed power amplifier Vmax=600V; C=30 F). dV/dt: critical rate-of-rise of off-stage voltage (linear wave form, VD = rated VBO, Tj = 25C).
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Figure V1. Voltage-Current Characteristics
I
IPP
IT
IH IBO IDM VT VDM VBO
V
Note: The voltage current (V-I) is useful in depicting the electrical characteristics of the SiBar thyristor surge protectors in relation to each other.
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Table V3. Parameter Definitions for SiBar Thyristor Surge Protectors
Symbol VBO IBO IH IT VT VDM IDM Ipp di/dt, dv/dt Parameter Breakover voltage Breakover current Hold current On-state current On-state voltage Maximum off-state voltage Off-state current Peak pulse current Critical rate of rise of on-state current and voltage Definition Maximum voltage across the device at breakdown measured under a specified voltage and current rate of rise. Instantaneous current flowing at the breakover voltage (VBO). Minimum current required to maintain the device in the on-state. Current through the device in the on-state condition. Voltage across the device in the on-state condition at a specified current (IT). Maximum DC voltage that can be applied to the device while maintaining it in the off-state condition. Maximum DC value of current that results from the application of the maximum off-state voltage. Rated peak pulse current of specified amplitude and waveshape that may be applied without damage. Maximum current and voltage rate of rise the device can withstand without damage.
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Figures V2-V5. Typical Electrical Characteristics vs. Temperature
Figure V2. Off-state Voltage vs. Temperature Figure V3. Breakover Voltage vs. Temperature
120% 115% Percentage of VDM at 25 C 110% 115%
105% 100% 95%
Percentage of VBO at 25C
110%
105%
100%
95%
90% 85% -50 90% -50
-25
0
25 75 50 Temperature (C)
100
125
150
-25
0
25 75 50 Temperature (C)
100
125
150
Figure V4. Hold Current vs. Temperature
Hold current vs. temperature 200% 180% Percentage of IH at 25 C 160% 140%
IDM (mA)
Figure V5. Off-state Current vs. Temperature
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100
10
120% 100% 80% 60% 40% 20% -50 -25 0 25 50 75 100 125 150
1
0.1
0.01
0.001 -25
0
25
50
75
100
125
150
Temperature (C)
Temperature (C)
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Physical Description for Dimensions for SiBar Thyristor Surge Protectors
Figure V6. Physical Description for Dimensions
S A
D
B C
K
P
J
H
Table V4. Product Dimensions for SiBar Thyristor Surge Protectors in Millimeters (Inches)
Dimension Min. TVBxxxSA(-L), TVBxxxSB-L, TVBxxxSC(-L) TVA270SA(-L) A Max. Min. B Max. C Min. Max. D* Min. Max. H Min. Max. J Min. Max. Min. K Max. P Ref. S Min. Max.
4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 5.21 5.59 (0.160) (0.180) (0.130) (0.150) (0.075) (0.095) (0.077) (0.083) (0.002)(0.006) (0.006) (0.012) (0.030) (0.050) (0.020) (0.205) (0.220) 4.06 4.57 2.29 2.92 1.91 2.41 1.27 1.63 0.010 0.152 0.15 0.41 0.76 1.52 (0.160) (0.180) (0.090) (0.115) (0.075) (0.095) (0.050) (0.064) (0.004)(0.006) (0.006) (0.016) (0.030) (0.060) -- -- 4.83 5.59 (0.190) (0.220)
Notes: *D dimension is measured within dimension P. TVA series devices use industry standard SMA package type. TVB series devices use industry standard SMB package type.
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All devices are bidirectional and may be oriented in either direction for installation.
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Table V5. Physical Characteristics and Environmental Specifications for SiBar Thyristor Surge Protectors
Lead material Encapsulating material Solderability Solder heat withstand Solvent resistance Mechanical shock Vibration Storage temperature (C) Operating temperature (C) Junction temperature (C) Maximum lead temperature for soldering pupose; 10 seconds (C) Tin/lead finish or matte tin finish(-L devices) Epoxy, meets UL94V-0 requirements per MIL-STD-750, Method 2026 per MIL-STD-750, Method 2031 per MIL-STD-750, Method 1022 per MIL-STD-750, Method 2016 per MIL-STD-750, Method 2056 -55 to 150 -40 to 125 150 +260
Table V6. Reliability Tests for SiBar Thyristor Surge Protectors
Test High temperature, reverse bias High humidity, high temperature, reverse bias High temperature storage life Temperature cycling Autoclave Conditions +100C, 50 VDC bias 85% RH, +85C, 50 VDC bias +150C -65C to +150C, 15 minute dwell 100% RH, +121C, 15 PSI Duration 1000 hours 1000 hours 1000 hours 1000 cycles 96 hours
Table V7. Packaging and Marking Information for SiBar Thyristor Surge Protectors (-L: Lead-free leaded devices)
Part Description TVA270SA TVA270SA-L
NEW
Tape and Reel Quantity 5,000 5,000 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500 2,500
Standard Package 20,000 20,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000 10,000
Part Marking 270A REAB 058A RCBB 170A RDBB 200A REBB 270A 300A 200B 270B 300B RCBD 170C RDBD 200C REBD 270C 300C
Recommended Pad Layout (mil/inch) Dimension Dimension A (Nom.) B (Nom.) 2.0 (0.079) 2.0 (0.079) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.261 (0.089) 2.0 (0.079) 2.0 (0.079) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085) 2.159 (0.085)
Dimension C (Nom.) 2.0 (0.079) 2.0 (0.079) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108) 2.743 (0.108)
Agency Recognition UL UL UL UL UL UL UL UL UL UL UL UL UL UL UL UL UL UL UL UL
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TVB058SA-L TVB170SA TVB170SA-L TVB200SA TVB200SA-L TVB270SA TVB270SA-L
NEW
TVB300SA-L TVB200SB-L TVB270SB-L TVB300SB-L TVB170SC TVB170SC-L TVB200SC TVB200SC-L TVB270SC TVB270SC-L
NEW NEW NEW
NEW
TVB300SC-L
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Recommended Pad Layout for SiBar Thyristor Surge Protectors
Figure V7. Recommended Pad Layout
C
B
A
B
Agency Recognition for SiBar Thyristor Surge Protectors
UL File # E179610
Part Numbering System for SiBar Thyristor Surge Protectors
TV B 270 S A -L Lead-free leads (matte tin finish) Surge current rating A, B, C, refer to Table V2 VDM (max. off-state voltage indicator) Package type: A: SMA package B: SMB package Product Family
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Solder Reflow and Rework Recommendations for SiBar Thyristor Surge Protectors
SiBar thyristor devices are compatible with standard reflow and wave soldering techniques. Figure V8
Solder Reflow
* Recommended reflow methods: IR, vapor phase oven, hot air oven. * Always preheat the device to prevent excessive thermal shock and stress. * Recommended maximum paste thickness of 0.25mm (0.010 in.). * Devices may be cleaned using standard industry methods and solvents.
300 250
Preheating
Soldering
Cooling
Temperature (C)
200 150 100 50 0
Solder Rework
* Use standard industry practices for the SiBar Thyristor Surge Protectors. 348
SiBar Thyristor Surge Protectors
30-90
5 Time (s)
120
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Table V8. Tape and Reel Specifications for SiBar Thyristor Surge Protectors
SiBar thyristor devices are supplied on tape and reel per EIA481-1 standard. (See Figures V9 and V10 for details.)
Description W P0 P1 P2 A0 B0 B1 max. D0 F E1 E2 min. T max. T1 max. K0 max. Leader min. Trailer min. TVB Series Dimensions (mm) 12 4.0 8.0 2.0 4.3 6.2 8.2 1.5 5.5 1.75 9.85 0.6 0.1 2.59 390 160 Tolerance (mm) +/- 0.30 +/- 0.10 +/- 0.10 +/- 0.10 -- -- -- + 0.1, -0.0 +/- 0.05 +/- 0.10 -- -- -- +/- 0.10 -- -- TVA Series Dimensions (mm) 12 4.0 8.0 2.0 2.9 5.59 8.2 1.5 5.5 1.75 9.85 0.6 0.1 2.36 390 160 Tolerance (mm) +/- 0.3 +/- 0.10 +/- 0.10 +/- 0.10 +/- 0.10 +/- 0.10 -- + 0.1, -0 +/- 0.05 +/- 0.10 -- -- -- +/- 0.10 -- --
Figure V9. EIA Referenced Taped Component Dimensions for SiBar Thyristor Surge Protectors
P0 T Cover tape A0 F E2 B1 K0 B0 W D0 P2 E1 Embossment
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T1
Center lines of cavity
P1
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Reel Dimension A max. N min. W1 W2 max. 330 50 12.4 + 2.0, -0 18.4
Figure V10. EIA Referenced Reel Dimensions for SiBar Thyristor Protectors
W2 (measured at hub) A N (hub dia.) W1 (measured at hub)
WARNING:
* Operation beyond the maximum ratings or improper use may result in device damage and possible electrical arcing and flame. * The devices are intended for protection against occasional overvoltage fault conditions and should not be used when repeated fault conditions or prolonged trip events are anticipated. * Device performance can be impacted negatively if devices are handled in a manner inconsistent with recommended electronic, thermal, and mechanical procedures for electronic components.
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